One Week News |Intel may become the worlds..........

2. The price of some materials in Ansemy has increased

3. New regulations on chip export control in the Netherlands take effect, and lithography giant ASML speaks out

4. TrendForce Jibang Consulting: The original factory successfully raised the Wafer contract price

Recently, the NAND Flash spot market particle quotes have been driven by the successful increase in wafer contract prices, with some products experiencing more active demand for inquiries. Market details According to TrendForce Consulting, the main reason was that in late August, the NAND Flash original factory further negotiated a new Wafer order with some Chinese indicator module manufacturers, and successfully raised the 512Gb Wafer contract price, an increase of about 10%. Other original factories also followed up to raise the prices of similar products, indicating that the original factory is unwilling to trade at a lower price, which has led to a short-term rise in the Wafer spot market in the near future. However, it remains to be seen whether there is actual terminal order support due to the emergence of relevant purchase orders based on an increase in supply side quotations.

5. Infineon collaborates with Edge Impulse to expand edge AI capabilities
On August 28, 2023, Munich, Germany, Infineon Technology Co., Ltd. recently announced a partnership with Edge Impulse to provide PSoC ™  63 Low power Bluetooth ® Microcontrollers (MCU) extend AI development tools based on micro machine learning. Artificial intelligence IoT application developers can now use the Edge Impulse Studio environment to build Edge Machine Learning (ML) applications on high-performance, low-power PSoC 63 low-power Bluetooth microcontrollers.
Infineon's PSoC 63 low-power Bluetooth microcontroller device adopts ARM based ®  Cortex ®- The dual core chip architecture of M4F and Arm Cortex-M0+integrates low-power Bluetooth 5.2, configurable voltage and frequency settings, built-in hardware security, and cutting-edge capacitor interfaces on a single chip. As the only 150 MHz low-power Bluetooth microprocessor in the market, this Infineon PSoC device combines energy efficiency, small size, and programmability, making it perfect for edge IoT applications that benefit from running advanced deep learning algorithms.
Edge Impulse's products simplify the process of collecting and building datasets, using pre built building block design algorithms, validating models with real-time data, and deploying fully optimized production readiness solutions on edge targets such as PSoC 63 low-power Bluetooth microcontrollers.

6. Huabang Electronics collaborates with Mobiveil to develop HYPERAM ™ controller
On August 30th, Huabang Electronics and Mobiveil jointly announced that they will collaborate to develop a new IP controller, expanding application scenarios to fields such as automobiles, intelligent IoTs, industry, wearable devices, TWS, smart speakers, and communication.
Mobiveil CEO Ravi Thummarukudy stated that HYPERAM ™  Support for HYPERBUS ™ Interface, only 13 signal pins are required to achieve speeds up to 500Mbps (x8 I/O).
HYPERAM ™  The controller also supports AXI memory mapping system interface, supports linear/mixed/surround burst transmission mode, and has ultra-low power sleep function (such as deep sleep mode and mixed sleep mode). In addition, the HYPERAM ™ The controller also supports AMBA ®  AHB-Lite system interface.
Fan Xiangyun, Deputy General Manager of Huabang Electronics DRAM Business Group, stated that the new HYPERAM ™ 3.0 already equipped with 22 pin extended IO HYPERBUS ™ Interface, supporting data transfer rates up to 1000Mbps.
Since its launch, Huabang Electronics' HYPERAM ™ The shipment volume has exceeded 400 million pieces. Data shows that Huabang Electronics' products include niche dynamic random access memory, mobile memory, encoded flash memory, and TrustME ® Secure flash memory is widely used in communication, consumer electronics, industrial and automotive electronics, computer peripherals, and other fields.

7. Samsung Electronics Announces Development of 12nm Level 32GbDRAM
On September 1, 2023, Samsung Electronics announced that it had adopted a 12 nanometer (nm) level process technology to develop its largest 32Gb DDR5 DRAM, which has twice the capacity of a 16Gb memory module in the same packaging size. It plans to start mass production by the end of this year.
SangJoon Hwang, Executive Vice President of the Memory Development Group of Samsung's Electronic Memory Business Unit, stated that on the basis of Samsung's latest 12 nanometer level 32Gb memory, Samsung can develop solutions to achieve 1TB memory modules, which will help meet the growing demand for large capacity DRAM memory in the era of artificial intelligence and big data.
It is reported that by using the latest developed 32Gb memory particles, 128GB memory modules can be produced even without the use of silicon through hole (TSV) technology. Compared with 128GB memory modules packaged with 16Gb memory, this product reduces power consumption by about 10%. This technological breakthrough makes this product the preferred solution for energy efficiency focused enterprises such as data centers. Based on the 12 nanometer level 32Gb DDR5 DRAM, Samsung plans to continue expanding its lineup of high-capacity DRAM products to meet the continuous growth needs of high-performance computing and the IT industry.

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